[Publication] International Electron Devices Meeting (IEDM) - Dr. Goh
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작성자 최고관리자
작성일 2021-09-22 10:48 조회 1,900회 댓글 0건
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Dr. Goh presented her paper in IEDM 2021 entitled "High performance and self rectifying hafnia based ferroelectric tunnel junction for neuromorphic computing and TCAM applications".
This is pretty awesome achievement.
Congratulation!
고영인 박사가 2021년도 IEDM에서 "High performance and self rectifying hafnia based ferroelectric tunnel junction for neuromorphic computing and TCAM applications" 제목의 논문을 개제하였습니다.
놀라운 성과를 축하 드립니다!
- 이전글[Joining] Seungyeop joined the ANTONIS Lab 22.08.20
- 다음글[Graduation] The first Ph.D. from ANTONIS Lab! - Dr. Goh 21.03.06
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