A Highly Reliable Ferroelectric NAND Cell with Ultra thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention Improvement 

Year

2025 

Author

Hyunjun Kang, Hongrae Joh, Junhyeok Kwak, Giuk Kim, Hyojun Choi, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, and Sanghun Jeon 

Conference

2025 IEEE International Electron Devices Meeting (IEDM) 

Status

Accepted