Non-volatile memory device having an asymmetrical gate dielectric layer and method of manufacturing the same

Year of publication

Before~2005

Inventor

Jeong Han, Soodoo Chae, Sanghun Jeon

Application No.

11084106

Application date

Registration No.

US20050205923A1

Registration date

Link

https://patents.google.com/patent/US20050205923A1/en 714회 연결