Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation

Year of publication

Before~2005

Inventor

Hyunsang Hwang, Sanghun Jeon

Application No.

10-0359489

Application date

Registration No.

US6797645B2

Registration date

Link

https://patents.google.com/patent/US6797645B2/en 757회 연결