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ANTONIS Lab Publication

Patent

Total 4건 1 페이지

Before~2005
4

Method of fabricating gate dielectric for use in semiconductor device Inventor : 황현상,전상훈
Application No. : KR1020000065830A Registration No. : KR100359489B1

LINK
3

Gate insulator of MOS transistor and method for fabricating the same Inventor : 황현상,이혜란,전상훈
Application No. : KR10-2001-0041230A Registration No. : KR100379621B1

LINK
2

Non-volatile memory device having an asymmetrical gate dielectric layer and method of manufacturing the same Inventor : Jeong Han, Soodoo Chae, Sanghun Jeon
Application No. : 11084106 Registration No. : US20050205923A1

LINK
1

Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation Inventor : Hyunsang Hwang, Sanghun Jeon
Application No. : 10-0359489 Registration No. : US6797645B2

LINK

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