Memory device including resistance change layer as storage node and method (s) for making the same

Year of publication

2009

Inventor

Yoon-dong Park, Won-joo Kim, Sang-Hun Jeon

Application No.

11270565

Application date

Registration No.

US7507674B2

Registration date

Link

https://patents.google.com/patent/US7507674B2/en 469회 연결