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ANTONIS Lab Publication

Patent

Total 13건 1 페이지

2009
13

Non-volatile semiconductor memory device with alternative metal gate material Inventor : Sanghun Jeon, Jung Han, Chungwoo Kim
Application No. : CNB2005101199530A Registration No. : ZL200510119953.0

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12

Make the method for memory device Inventor : Sanghun Jeon, Kyusik Choi, Chungwoo Kim, Sungho Park, JungHee Han
Application No. : CNB2006100681304A Registration No. : ZL200610068130.4

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11

Memory device including resistance change layer as storage node and method(s) for making the same Inventor : Yoondong Park, Wonju Kim, Sanghun Jeon
Application No. : CNB2005101202980A Registration No. : ZL200510120298.0

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10

Semiconductor device doped with Sb,Ga or Bi and method of manufacturing the same Inventor : Sanghun Jeon, Chungwoo Kim, Hyunsang Hwang, Sungkwon Baek, Sangmoo Choi
Application No. : CNB2006100061208A Registration No. : ZL200610006120.8

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9

Hybrid multi-bit nonvolatile memory devices and the fabrication method Inventor : Yoondong Park, Wonju Kim, Sanghun Jeon
Application No. : CNB2005101362551A Registration No. : ZL200510136255.1

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8

SONOS memory device and method of manufacturing the same Inventor : Sanghun Jeon, Soodoo Chae, Juhyung Kim, Chungwoo Kim
Application No. : CNB2004100766642A Registration No. : ZL200410076664.2

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7

SONOS type memory device Inventor : Sanghun Jeon, Chungwoo Kim, Dongjun Ma, Sungkyu Choi
Application No. : CNB2005100036659A Registration No. : ZL200510003665.9

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6

Non-volatile memory devices including barrier layers and methods of manufacturing the same Inventor : Sanghun Jeon, Hyunsang Hwang, Chungwoo Kim
Application No. : CNB200510106838XA Registration No. : ZL2005101062009-38.X

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5

Emiconductor devcie and method of fabricating the same Inventor : 전상훈,최정달,강창석,정원석
Application No. : KR1020060102566A Registration No. : KR100882797B1

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4

Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same Inventor : Sang-Hun JeonChung-woo KimHyun-sang HwangSung-Kweon BaekSang-Moo Choi
Registration No. : US7531865B2

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3

Nonvolatile memory devices and methods of fabricating the same Inventor : Sang-Hun Jeon, Chang-seok Kang, Jung-Dal Choi, Jin-Taek Park, Woong-Hee Sohn, Won-Seok Jung
Application No. : 11709816 Registration No. : US7547942B2

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2

Memory device using multi-layer with a graded resistance change Inventor : Myoung-Jae Lee, In-kyeong Yoo, Sun-Ae Seo, Dong-seok Suh, David Seo, Sang-Hun Jeon
Application No. : 11116332 Registration No. : US7521704B2

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1

Memory device including resistance change layer as storage node and method (s) for making the same Inventor : Yoon-dong Park, Won-joo Kim, Sang-Hun Jeon
Application No. : 11270565 Registration No. : US7507674B2

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