Non-volatile Memory Device with Asymmetrical Gate Dielectric Layer and Manufacturing Method thereof

Year of publication

2006

Inventor

한정희,채수두,전상훈

Application No.

KR1020040018748A

Application date

Registration No.

KR100630680B1

Registration date

Link

https://patents.google.com/patent/KR100630680B1/en 397회 연결