Semiconductor memory device that uses metal nitride as trap site and method of manufacturing the same

Year of publication

2006

Inventor

Sang-Hun Jeon, Chung-woo Kim, Hyun-sang Hwang, Sang-Moo Choi

Application No.

11365114

Application date

Registration No.

US20060192246A1

Registration date

Link

https://patents.google.com/patent/US20060192246A1/en 432회 연결