Method of manufacturing memory device comprising resistance change layer as storage node

Year of publication

2007

Inventor

박윤동,김원주,전상훈

Application No.

KR1020040091492A

Application date

Registration No.

KR100682899B1

Registration date

Link

https://patents.google.com/patent/KR100682899B1/en?oq=10-0682899 405회 연결