"Oxide Interlayer Engineering in Self-Rectifying Ferroelectric Tunnel Junctions: Oxygen Reservoir Effect on Interface Passivation and Memory Reliability"

Paul Gallegos, Sohyeon An, Seungyeon Chang, Jae-hyeon Cho, Hunbeom Shin, Seokwon Lee, Sang-hee Ko Park, Mincheol Shin, Jinho Ahn, Sanghun Jeon, ACS Applied Electronic Materials,

"Postdeposition Annealing-Induced Suppression of Interfacial Dead Layers and Oxygen Vacancies in Source-Tied Covering Metal-Integrated Oxide-Channel FeFETs"

Minyong Lee, Hongrae Joh, Sangho Lee, Sanghyun Park, Suhwan Lim, Kwangyou Seo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters,

"TiO2 nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory"

Hyunjun Kang, Junhyeok Kwak, Giuk Kim, Sangho Lee, Yongyeon Kim, Sanghyun Park, Suhwan Lim, Kwangyou Seo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, Nano Convergence,

"Enhanced Ferroelectricity in Hf1−XZrXO2 Thin Films Through Ultrathin Mo Electrode Layer and Microwave Annealing"

Sohyeon An, Yongsu Kim, Sangho Lee, Yangjin Jung, Sangmin Park, Sanghun Jeon, PSS RRL,

"Compositional Tuning of Bilayer Hf1−xZrxO2 for Enhanced Negative Capacitance and Energy Storage Performance"

Seungyeon Chang, Sangho Lee, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters,

"Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETs"

Hoon Kim, Giuk Kim, Hyojun Choi, Hongrae Joh, Hyunjun Kang, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Electron Device Letters,

"A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention"

Hyunjun Kang, Hongrae Joh, Junhyeok Kwak, Giuk Kim, Hyojun Choi, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices,

"Engineering Negative Capacitance in Hf0.5Zr0.5O2 for Low-Power and Reliable Charge Trap Flash Memory"

Yunseok Nam, Sangho Lee, Yangjin Jung, Kang Kim, Jihye Ok, Jinwook Ha, Heemin Yoon, Mincheol Shin, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, ACS Applied Materials & Interfaces,