Ferroelectricity in Sub‐3 nm HZO via a Thin Mo Layer: Interface Engineering for Scalable Memory

Author

Yongsu Kim, Junghyeon Hwang, Chaeheon Kim, Geonhyeong Kang, Sanghun Jeon

Journal

physica status solidi (a)

Year

2025

Link

https://doi.org/10.1002/pssa.202500590 752회 연결