Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory

Author

Boram Yi, Junghyeon Hwang, Tae Woo Oh, Sanghun Jeon, Seong-Ook Jung, Ji-Woon Yang

Journal

Solid-State Electronics

Status

Accepted

Vol

206

Page

108674

Year

2023

Link

https://doi.org/10.1016/j.sse.2023.108674 697회 연결