Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors
- Journal
- ACS Applied Materials & Interfaces
- Status
- Accepted
- Vol
- 15
- Page
- 1, 1463–1474
- Year
- 2022
- Link
- https://doi.org/10.1021/acsami.2c14867 1026회 연결
