High Performance Ferroelectric Field Effect Transistor for Large Memory-window, High-reliability and High-speed 3-dimensional NAND Flash Memory

Author

Giuk Kim‡, Sangho Lee‡

Co-author

Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon

Journal

Journal of Materials Chemistry C

Year

2022

Link

https://pubs.rsc.org/en/content/articlehtml/2022/tc/d2tc01608g 1260회 연결