High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel

Author

Taeho Kim, Junghyeon Hwang, Giuk Kim, Minhyun Jung, Sanghun Jeon

Journal

physica status solidi (RRL)–Rapid Research Letters

Vol

15

Page

2100018

Year

2021

Link

https://onlinelibrary.wiley.com/doi/full/10.1002/pssr.202100018 929회 연결