Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors

Author

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon

Journal

IEEE Transactions on Electron Devices

Vol

68

Page

1996-2002

Year

2021

Link

https://ieeexplore.ieee.org/abstract/document/9377319 871회 연결