Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature
- Journal
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Vol
- 21
- Page
- 62-67
- Year
- 2021
- Link
- https://doi.org/10.5573/JSTS.2021.21.1.062 844회 연결
