Sub 5 Å-EOT HfₓZr1–xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

Author

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon

Journal

IEEE Transactions on Electron Devices

Vol

69

Page

103-108

Year

2021

Link

https://ieeexplore.ieee.org/abstract/document/9656544 1502회 연결