"Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier"

Minki Kim, Youngin Goh, Junghyeon Hwang, Sanghun Jeon, Applied Physics Letters, 119, 262905

"Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory"

Sangho Lee, Giuk Kim, Taeho Kim, Taehyong Eom, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters, 2100532

"Sub 5 Å-EOT HfₓZr1–xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process"

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Transactions on Electron Devices, 69, 103-108

"Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing"

Hongrae Joh, Minhyun Jung, Junghyeon Hwang, Youngin Goh, Taeseung Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 14, 1326-1333

"Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays"

Youngin Goh, Junghyeon Hwang, Minki Kim, Yongsun Lee, Minhyun Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 13, 59422-59430

"Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors"

Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, Journal of Applied Physics, 129, 244106

"Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant"

Hyoungkyu Kim, Seokjung Yun, Tae Ho Kim, Hoon Kim, Changdeuck Bae, Sanghun Jeon, Seungbum Hong, physica status solidi (RRL)–Rapid Research Letters, 15, 2100020

"High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel"

Taeho Kim, Junghyeon Hwang, Giuk Kim, Minhyun Jung, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters, 15, 2100018

"Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process"

Venkateswarlu Gaddam, Dipjyoti Das, Taeseung Jung, Sanghun Jeon, IEEE Electron Device Letters, 42, 812-815

"Stress engineering as a strategy to achieve high ferroelectricity in thick Hafnia using interlayer"

Hongrae Joh, Taeseung Jung, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 2538-2542

"Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors"

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 1996-2002

"Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature"

Dipjyoti Das, Venkateswarlu Gaddam, Sanghun Jeon, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 21, 62-67

"Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors"

Dipjyoti Das, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Electron Device Letters, 42, 331-334

"The influence of top and bottom metal electrodes on ferroelectricity of hafnia"

Yongsun Lee, Youngin Goh, Junghyeon Hwang, Dipjyoti Das, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 523-528