Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
- Journal
- IEEE Transactions on Electron Devices
- Vol
- 67
- Page
- 745-750
- Year
- 2020
- Link
- https://ieeexplore.ieee.org/abstract/document/8962183 1097회 연결
