"Effect of insertion of dielectric layer on the performance of Hafnia ferroelectric devices"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 841-845

"Metal-induced n+/n homojunction for ultrahigh electron mobility transistors"

Ji-Min Park, Hyoung-Do Kim, Hongrae Joh, Seong Cheol Jang, Kyung Park, Yun Chang Park, Ho-Hyun Nahm, Yong-Hyun Kim, Sanghun Jeon, Hyun-Suk Kim, NPG Asia Materials, 12, 1-12

"Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization"

Youngin Goh, Junghyeon Hwang, Yongsun Lee, Minki Kim, Sanghun Jeon, Applied Physics Letters, 117, 242901

"Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering"

Youngin Goh, Junghyeon Hwang, Sanghun Jeon, ACS Applied Materials & Interfaces, 12, 57539-57546

"Effect of Ga composition on mobility in a-InGaZnO thin-film transistors"

Minho Ahn, Venkateswarlu Gaddam, Sungho Park, Sanghun Jeon, Nanotechnology, 32, 095201

"Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system"

Dipjyoti Das, Taeho Kim, Venkateswarlu Gaddam, Changhwan Shin, Sanghun Jeon, Solid-State Electronics, 174, 107914

"Interfacial Dipole Modulation Device With SiOX Switching Species"

Giuk Kim, Taeho Kim, Sanghun Jeon, IEEE Journal of the Electron Devices Society, 9, 57-60

"Hafnia ferroelectric device for semiconductor, sensor, and display applications"

Sanghun Jeon, ECS Transactions, 98, 219

"Crystalline phase-controlled high-quality Hafnia ferroelectric with RuO₂ electrode"

Youngin Goh, Sung Hyun Cho, Sang-Hee Ko Park, Sanghun Jeon, IEEE Transactions on Electron Devices, 67, 3431-3434

"Effect of forming gas high-pressure annealing on metal-ferroelectric-semiconductor hafnia ferroelectric tunnel junction"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, IEEE Electron Device Letters, 41, 1193-1196

"Metallic glass-based dual-mode sensor for soft electronics"

Minhyun Jung, Changjin Yun, Mingu Kim, Kungwon Rhie, Sanghun Jeon, IEEE Sensors Journal, 20, 12396-12401

"High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal"

Dipjyoti Das, Sanghun Jeon, IEEE Transactions on Electron Devices, 67, 2489-2494

"Flexible multimodal sensor inspired by human skin based on hair-type flow, temperature, and pressure"

Minhyun Jung, Jumi Lee, Sujaya Kumar Vishwanath, Oh-Sun Kwon, Chi Won Ahn, Kwanwoo Shin, Sanghun Jeon, Flexible and Printed Electronics, 5, 025003

"Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors"

Vekateswarlu Gaddam, Dipjyoti Das, Sanghun Jeon, IEEE Transactions on Electron Devices, 67, 745-750

"Evolution of crystallographic structure and ferroelectricity of Hf0. 5Zr0. 5O2 films with different deposition rate"

Taeho Kim, Minho An, Sanghun Jeon, AIP Advances, 10, 015104