The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

Author

Youngin Goh, Sanghun Jeon

Journal

Nanotechnology

Vol

29

Page

335201

Year

2018

Link

https://iopscience.iop.org/article/10.1088/1361-6528/aac6b3/meta 716회 연결