"Non-volatile resistive switching in CuBi-based conductive bridge random access memory device"

Sujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun Jeon, Applied Physics Letters, 112, 253503

"The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2"

Youngin Goh, Sanghun Jeon, Nanotechnology, 29, 335201

"Scalable and facile synthesis of stretchable thermoelectric fabric for wearable self-powered temperature sensors"

Minhyun Jung, Sanghun Jeon, Jihyun Bae, RSC advances, 8, 70

"Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing"

Taeho Kim, Sanghun Jeon, IEEE Transactions on Electron Devices, 65, 1771-1773

"Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching"

Sujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun Jeon, Nanotechnology, 29, 235202

"Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films"

Taeho Kim, Jinsung Park, Byoung-Ho Cheong, Sanghun Jeon, Applied Physics Letters, 112, 092906

"Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I–V method"

Junghak Park, Ji-Hyun Hur, Sanghun Jeon, Nanotechnology, 29, 175704

"Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 Interface"

Hyunsuk Woo, Sujaya Kumar Vishwanath, Sanghun Jeon, ACS applied materials & interfaces, 10, 8124-8131

"First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates"

Youngin Goh, Sanghun Jeon, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 36, 052204

"Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing"

Youngin Goh, Sanghun Jeon, Applied Physics Letters, 113, 052905

"Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory"

Sujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun Jeon, Nanotechnology, 29, 385207

"Resistive switching characteristics of a modified active electrode and Ti buffer layer in CuSe-based atomic switch"

Hyunsuk Woo, Sujaya Kumar Vishwanath, Sanghun Jeon, Journal of Alloys and Compounds, 753, 551-557

"Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor"

Youngin Goh, Sanghun Jeon, IEEE Transactions on Electron Devices, 65, 3264-3268