Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Author

Jae Seok Yoon, Amit Tewari, Changhwan Shin, Sanghun Jeon

Journal

IEEE Electron Device Letters

Vol

40

Page

1076-1079

Year

2019

Link

https://ieeexplore.ieee.org/abstract/document/8721718 725회 연결