Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

Author

Youngin Goh, Sanghun Jeon

Journal

Applied Physics Letters

Vol

113

Page

052905

Year

2018

Link

https://aip.scitation.org/doi/full/10.1063/1.5040031 786회 연결