Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory

Author

Sujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun Jeon

Journal

Nanotechnology

Vol

29

Page

385207

Year

2018

Link

https://iopscience.iop.org/article/10.1088/1361-6528/aacd35/meta 636회 연결