Effect of forming gas high-pressure annealing on metal-ferroelectric-semiconductor hafnia ferroelectric tunnel junction

Author

Junghyeon Hwang, Youngin Goh, Sanghun Jeon

Journal

IEEE Electron Device Letters

Vol

41

Page

1193-1196

Year

2020

Link

https://ieeexplore.ieee.org/abstract/document/9115018 1087회 연결