High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

Author

Dipjyoti Das, Sanghun Jeon

Journal

IEEE Transactions on Electron Devices

Vol

67

Page

2489-2494

Year

2020

Link

https://ieeexplore.ieee.org/abstract/document/9079173 845회 연결