Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
- Journal
- IEEE Electron Device Letters
- Vol
- 42
- Page
- 812-815
- Year
- 2021
- Link
- https://ieeexplore.ieee.org/abstract/document/9410571 1287회 연결
