"Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant"

Hyoungkyu Kim, Seokjung Yun, Tae Ho Kim, Hoon Kim, Changdeuck Bae, Sanghun Jeon, Seungbum Hong, physica status solidi (RRL)–Rapid Research Letters, 15, 2100020

"High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel"

Taeho Kim, Junghyeon Hwang, Giuk Kim, Minhyun Jung, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters, 15, 2100018

"Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process"

Venkateswarlu Gaddam, Dipjyoti Das, Taeseung Jung, Sanghun Jeon, IEEE Electron Device Letters, 42, 812-815

"Stress engineering as a strategy to achieve high ferroelectricity in thick Hafnia using interlayer"

Hongrae Joh, Taeseung Jung, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 2538-2542

"Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors"

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 1996-2002

"Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature"

Dipjyoti Das, Venkateswarlu Gaddam, Sanghun Jeon, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 21, 62-67

"Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors"

Dipjyoti Das, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Electron Device Letters, 42, 331-334

"The influence of top and bottom metal electrodes on ferroelectricity of hafnia"

Yongsun Lee, Youngin Goh, Junghyeon Hwang, Dipjyoti Das, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 523-528

"Effect of insertion of dielectric layer on the performance of Hafnia ferroelectric devices"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, IEEE Transactions on Electron Devices, 68, 841-845

"Metal-induced n+/n homojunction for ultrahigh electron mobility transistors"

Ji-Min Park, Hyoung-Do Kim, Hongrae Joh, Seong Cheol Jang, Kyung Park, Yun Chang Park, Ho-Hyun Nahm, Yong-Hyun Kim, Sanghun Jeon, Hyun-Suk Kim, NPG Asia Materials, 12, 1-12

"Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization"

Youngin Goh, Junghyeon Hwang, Yongsun Lee, Minki Kim, Sanghun Jeon, Applied Physics Letters, 117, 242901

"Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering"

Youngin Goh, Junghyeon Hwang, Sanghun Jeon, ACS Applied Materials & Interfaces, 12, 57539-57546

"Effect of Ga composition on mobility in a-InGaZnO thin-film transistors"

Minho Ahn, Venkateswarlu Gaddam, Sungho Park, Sanghun Jeon, Nanotechnology, 32, 095201

"Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system"

Dipjyoti Das, Taeho Kim, Venkateswarlu Gaddam, Changhwan Shin, Sanghun Jeon, Solid-State Electronics, 174, 107914

"Interfacial Dipole Modulation Device With SiOX Switching Species"

Giuk Kim, Taeho Kim, Sanghun Jeon, IEEE Journal of the Electron Devices Society, 9, 57-60