Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability
- Journal
- Journal of Vacuum Science & Technology B
- Vol
- 40
- Page
- 042201
- Year
- 2022
- Link
- https://avs.scitation.org/doi/full/10.1116/6.0001800 808회 연결