"The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications"

Taeho Kim†, Giuk Kim†, Dong Han Ko, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Yeongseok Jeong, Seong-Ook Jung, and Sanghun Jeon, Advanced Functional Materials,

"Steep Slope Transistor with Imprinted Antiferroelectric Film"

Sangho Lee‡, Yongsun Lee‡, Taeho Kim, Giuk Kim, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, and Sanghun Jeon*, ACS Applied Materials & Interfaces, accepted,

"A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology"

Minhyun Jung, Venkateswarlu Gaddam, Sanghun Jeon, Nano Convergence, 9, 1, 1-18

"Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing"

Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, Minhyun Jung, Chaeheon Kim, and Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted,

"Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability"

Taeseung Jung, Sanghun Jeon, Journal of Vacuum Science & Technology B, 40, 042201

"Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology"

Junghyeon Hwang, Sehee Lim, Giuk Kim, Seong-Ook Jung, Sanghun Jeon, IEEE Electron Device Letters, 43, 1049-1052

"Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process"

Junghyeon Hwang, Minki Kim, Minhyun Jung, Taeho Kim, Youngin Goh, Yongsun Lee, Sanghun Jeon, IEEE Transactions on Electron Devices, 69, 3439-3445

"Oxide electronics: Translating materials science from lab-to-fab"

Arokia Nathan, Sanghun Jeon, MRS Bulletin, 46, 1028-1036

"High Performance Ferroelectric Field Effect Transistor for Large Memory-window, High-reliability and High-speed 3-dimensional NAND Flash Memory"

Giuk Kim‡, Sangho Lee‡, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon, Journal of Materials Chemistry C,

"Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier"

Minki Kim, Youngin Goh, Junghyeon Hwang, Sanghun Jeon, Applied Physics Letters, 119, 262905

"Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory"

Sangho Lee, Giuk Kim, Taeho Kim, Taehyong Eom, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters, 2100532

"Sub 5 Å-EOT HfₓZr1–xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process"

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, IEEE Transactions on Electron Devices, 69, 103-108

"Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing"

Hongrae Joh, Minhyun Jung, Junghyeon Hwang, Youngin Goh, Taeseung Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 14, 1326-1333

"Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays"

Youngin Goh, Junghyeon Hwang, Minki Kim, Yongsun Lee, Minhyun Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 13, 59422-59430

"Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors"

Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon, Journal of Applied Physics, 129, 244106