Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 °C) microwave annealing for flexible electronics
- Journal
- Journal of Vacuum Science & Technology B
- Status
- Accepted
- Vol
- Volume 41, Issue 3
- Page
- 032201
- Year
- 2023
- Link
- https://doi.org/10.1116/6.0002343 913회 연결