"Ultrafast (50 ns) ID–VG Analysis on Oxide ThinFilm Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator"

Taeseung Jung, Sooji Nam, and Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET"

Sangho Lee, Giuk Kim, Youngkyu Lee, Hunbeom Shin, Youngseok Jeong, Lingwei Zhang, Seong-Ook Jung, Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film"

Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, Hye Jin Kim, Yunjeong Kim, Jinho Ahn, Sanghun Jeon, Advanced Electronic Materials, 2300594

"Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network"

Junghyeon Hwang, Hongrae Joh, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 16, 2, 2467-2476

"Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization"

Seonghoon Jang, Youngjun Kim, Jihoon Jeon, Seonggil Ham, Sanghyeon Choi, Jehyeon Yang, Seong Keun Kim, Sanghun Jeon, Jingon Jang, Gunuk Wang, Journal of Alloys and Compounds, Accepted, 965, 171247

"Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory"

Boram Yi, Junghyeon Hwang, Tae Woo Oh, Sanghun Jeon, Seong-Ook Jung, Ji-Woon Yang, Solid-State Electronics, Accepted, 206, 108674

"Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices"

Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung, IEEE Journal of Solid-State Circuits, Accepted, 58, 7, 1860-1870

"Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications"

Hongrae Joh, Sooji Nam, Minhyun Jung, Hunbeom Shin, Sung Haeng Cho, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 15, 44, 51339-51349

"Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Small, Accepted, 2305271

"High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary"

Minhyun Jung, Chaeheon Kim, Junghyeon Hwang, Giuk Kim, Hunbeom Shin, Venkateswarlu Gaddam, and Sanghun Jeon, ACS Applied Electronic Materials, Accepted, 5, 9, 4826-4835

"Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 °C) microwave annealing for flexible electronics"

Taeseung Jung, Jung Hoon Han, Sooji Nam, Sanghun Jeon, Journal of Vacuum Science & Technology B, Accepted, Volume 41, Issue 3, 032201

"A method of controlling the imprint effect in hafnia ferroelectric device"

Hunbeom Shin, Venkateswarlu Gaddam, Youngin Goh, Yeongseok Jeong, Giuk Kim, Yixin Qin, Sanghun Jeon, Applied Physics Letters, Accepted, Volume 122, Issue 2, 022901

"Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors"

Giuk Kim, Dong Han Ko, Taeho Kim, Sangho Lee, Minhyun Jung, Young Kyu Lee, Sehee Lim, Minyoung Jo, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Seongook Jung, and Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 15, 1, 1463–1474

"Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors"

Sangho Lee, Youngkyu Lee, Giuk Kim, Taeho Kim, Taehyong Eom, Seong-Ook Jung, Sanghun Jeon, IEEE Transactions on Electron Devices,

"Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices"

Yeongseok Jeong, Venkateswarlu Gaddam, Youngin Goh, Hunbeom Shin, Sangho Lee, Giuk Kim, Sanghun Jeon, IEEE Transactions on Electron Devices,