Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer

Author

Giuk Kim , Taeho Kim, Hyojun Choi, Seokjoong Shin, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Journal

IEEE Transactions on Electron Devices

Status

Accepted

Year

2025

Link

http://doi.org/10.1109/TED.2025.3592164 667회 연결