Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology

Author

Ketong Yang, Hunbeom Shin, Seungyeob Kim, Taeseung Jung, Sanghun Jeon

Journal

Journal of Materials Chemistry C

Status

Accepted

Year

2025

Link

https://doi.org/10.1039/D4TC04979A 1078회 연결