"Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology"

Ketong Yang, Hunbeom Shin, Seungyeob Kim, Taeseung Jung, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing"

Geonhyeong Kang, Hunbeom Shin, Seungyeob Kim, Lingwei Zhang, Giuk Kim, Sujeong Lee, Yunseok Nam, Chaeheon Kim, Hoon Kim, Jinho Ahn, Sanghun Jeon, Journal of Vacuum Science & Technology B, Accepted,