"Vertically Integrated In-Sensor Processing System Based on Three-Dimensional Reservoir for Artificial Tactile System"

Taeseung Jung, Dohan Kim, Giuk Kim, Seungyeob Kim, Hyojun Choi, Minyoung Jo, Yunjeong Kim, Jinho Ahn, Seong-Ook Jung, Sanghun Jeon, Energy & Environmental Materials, Accepted,

"Near-Sensor Analog Computing via Monolithic 3DPiezoelectric Sensor–FeFET for Tactile Sensing System"

Woongjin Kim, Seungyeob Kim, Jinwook Ha, Taeseung Jung, Yunjeong Kim, Jinho Ahn, Sanghun Jeon, Advanced Functional Materials, Accepted,

"Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer"

Giuk Kim , Taeho Kim, Hyojun Choi, Seokjoong Shin, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering"

Seokjoong Shin, Giuk kim, Hyojun Choi, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, IEEE Electron Device Letters, Accepted,

"Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory"

Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 ∘C) in HZO (>10 nm) Films Using Microwave Annealing"

Taeseung Jung, Hunbeom Shin, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"A Wireless, Battery-Free Temperature Sensor Utilizing the Morphotropic Phase Boundary of HfxZr1-xO2 Thin Film"

Ketong Yang , Seungyeob Kim , Taeseung Jung, Sanghun Jeon, Journal of Materials Chemistry C,

"Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory"

Sangho Lee, Giuk Kim, Yunseok Nam, Yeongseok Jeong, Taeho Kim, Hunbeom Shin, Sangmok Lee, Jinho Ahn, Sanghun Jeon, IEEE Electron Device Letters, Accepted,

"Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology"

Ketong Yang, Hunbeom Shin, Seungyeob Kim, Taeseung Jung, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing"

Geonhyeong Kang, Hunbeom Shin, Seungyeob Kim, Lingwei Zhang, Giuk Kim, Sujeong Lee, Yunseok Nam, Chaeheon Kim, Hoon Kim, Jinho Ahn, Sanghun Jeon, Journal of Vacuum Science & Technology B, Accepted,

"Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations"

Hongrae Joh, Sangho Lee, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"A six-level ferroelectric storage cell based on a bidirectional imprint field"

Chaeheon Kim, Junghyeon Hwang, Hunbeom Shin, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Advanced science news,

"Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory"

Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures"

Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Nano Convergence, Accepted,