"Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction"

Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

"Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications"

Hongrae Joh, Sooji Nam, Minhyun Jung, Hunbeom Shin, Sung Haeng Cho, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 15, 44, 51339-51349

"Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Small, Accepted, 2305271