"In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling"

Giuk Kim†, Hyojun Choi†, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 1-2

"Low-Damage Processed and High-Pressure Annealed High-κ Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-κ of 70 for DRAM Technology"

Venkateswarlu Gaddam†, Junghyeon Hwang†, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 1-2

"Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network"

Junghyeon Hwang, Hongrae Joh, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 16, 2, 2467-2476

"Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction"

Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

"Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications"

Hongrae Joh, Sooji Nam, Minhyun Jung, Hunbeom Shin, Sung Haeng Cho, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 15, 44, 51339-51349

"Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Small, Accepted, 2305271

"Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices"

Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh and Sanghun Jeon, International Electron Devices Meeting (IEDM) 2022,

"The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications"

Taeho Kim†, Giuk Kim†, Dong Han Ko, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Yeongseok Jeong, Seong-Ook Jung, and Sanghun Jeon, Advanced Functional Materials,

"Steep Slope Transistor with Imprinted Antiferroelectric Film"

Sangho Lee‡, Yongsun Lee‡, Taeho Kim, Giuk Kim, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, and Sanghun Jeon*, ACS Applied Materials & Interfaces, accepted,

"Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing"

Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, Minhyun Jung, Chaeheon Kim, and Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted,

"Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing"

Hongrae Joh, Minhyun Jung, Junghyeon Hwang, Youngin Goh, Taeseung Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 14, 1326-1333

"Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays"

Youngin Goh, Junghyeon Hwang, Minki Kim, Yongsun Lee, Minhyun Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 13, 59422-59430

"High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications,"

Youngin Goh, Junghyeon Hwang , Minki Kim, Minhyun Jung , Sehee Lim , Seong-Ook Jung and Sanghun Jeon, IEEE International Electron Devices Meeting (IEDM), 2021, pp. 17.2.1-17.2.4

"Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering"

Youngin Goh, Junghyeon Hwang, Sanghun Jeon, ACS Applied Materials & Interfaces, 12, 57539-57546

"Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 Interface"

Hyunsuk Woo, Sujaya Kumar Vishwanath, Sanghun Jeon, ACS Applied Materials & Interfaces, 10, 8124-8131