Completed High performance (Endurance 10^12 Retention 85℃/10^5 sec. switching time within 15ns) hafnium oxide ferroelectric transistor memory device technology development and theoretical research
본문
Period: 2018-02-26 ~ 2021-09-30
Sponsor: Korea Evaluation Institute of Industrial Technology (KEIT)
- 이전글High performance (Endurance 10^12 Retention 85℃/10^5 sec. switching time within 15ns) hafnium oxide ferroelectric transistor memory device technology development and theoretical research
- 다음글Development of high-quality HfO2 ferroelectric process for future semiconductor devices and research on new materials