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ANTONIS Lab Research

Research Projects

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Completed Development of high-quality HfO2 ferroelectric process for future semiconductor devices and research on new materials

본문

Period: 2018-06-01 ~ 2021-05-31

이전글High performance (Endurance 10^12 Retention 85℃/10^5 sec. switching time within 15ns) hafnium oxide ferroelectric transistor memory device technology development and theoretical research
다음글Low Temperature Process (<550°C) Hafnia Ferroelectric Tunnel Junction for Non-Volatile Logic