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ANTONIS Lab Research

Research Projects

Completed Low Temperature Process (<550°C) Hafnia Ferroelectric Tunnel Junction for Non-Volatile Logic

본문

Period: 2018-03-01 ~ 2021-02-28

이전글Development of high-quality HfO2 ferroelectric process for future semiconductor devices and research on new materials
다음글Low-temperature hafnia ferroelectric process development and TFT integration research for functional TFT