목록 게시판 리스트 옵션 검색 Completed Hafnia ferroelectric transistor process development and device research 본문 Period: 2018-07-23 ~ 2019-12-31 Sponsor: Samsung Electronics Co., Ltd. (SEC) 이전글Hybrid multifunctional sensor for wearable device application 다음글Super-steep switching device technology research using new materials and new structures