Introduction
Member
Research
Publication
Board
Low Temperature Process (<550°C) Hafnia Ferroelectric Tunnel Junction for Non-Volatile Logic
Period : 2018-03-01 ~ 2021-02-28
Sponsor : Samsung Electronics Co., Ltd. (SEC)
Low-temperature hafnia ferroelectric process development and TFT integration research for functional TFT
Period : 2019-07-01 ~ 2020-06-30
Sponsor : LG Display
Hybrid multifunctional sensor for wearable device application
Period : 2018-03-01 ~ 2020-02-29
Sponsor : National Research Foundation of Korea (NRF)
Hafnia ferroelectric transistor process development and device research
Period : 2018-07-23 ~ 2019-12-31
Super-steep switching device technology research using new materials and new structures
Period : 2018-02-26 ~ 2019-12-31
Sponsor : Korea Evaluation Institute of Industrial Technology (KEIT)
Development of high-sensitivity (minimum pressure 50Pa, high-speed 20ms) and multi-mode (pressure, temperature, slip) tactile sensor technology for robot electronic skin)
Period : 2018-02-26 ~ 2019-06-30
Development of high-efficiency omni-directional visible light sensing dual photoactive inorganic semiconductor-based phototransistor
Period : 2018-07-01 ~ 2019-06-30